Cascoded HBT pair: A new method of generating subnanosecond high-voltage impulses

✍ Scribed by Jingjing Xia; Choi Look Law

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 415 KB
• Volume: 52
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.25295

✦ Synopsis

Abstract

In this letter, a fully integrated subnanosecond high‐voltage impulse generator using 2‐μm GaAs HBT process is presented. The core circuit consists of a cascoded HBT pair with an inductor and it works on two principles: a faster transition can be obtained from a digital logic input into the HBT and a differentiation of the very fast transition current using the inductor to generate a large voltage at the output. Measurement results show the generated impulses have a tunable peak voltage between 0.5 and 3.2 V with a full‐width‐half‐maximum (FWHM) of 100 ps. The impulse generator is biased from a 3.3 V battery supply and consumes 15 mW at 1 MHz pulse repetition rate (PRF). © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1683–1685, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25295