Complete active space MC SCF and restricted first-order CI calculations of low-lying states of Si, ('A,, 3Br, 'Br, 3B,, 'Bi, 3A2, 'A,) and potential energy surfaces of the 'A, and 3Br states are calculated. MRSDCI calculations are carried out for the 'A, and 'A\ (D3k) states. The ground state of Si,
CAS SCF/CI calculations of low-lying states of SnH2
โ Scribed by K. Balasubramanian
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 406 KB
- Volume
- 127
- Category
- Article
- ISSN
- 0009-2614
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โฆ Synopsis
Complete active space MC SCF (CAS SCF) followed by full second-order CI calculations are carried out on the three lowest-lying states of SnH, ('A,, 3B,, 'B,). Relativistic effective core potentials are employed for the tin atom with the outer d"s2p2 shell as the valence shell. The ground state is found to be 'A, (re = 1.78 A, 0, = 92"). The calculated properties of the 3B, state are, re =1.72 A, S, =119", T, = 22.5 kcal/mole; corresponding values for the 'B, state are 1.75 A, 120" and 48.5 kcal/mole. These results are compared with SiH 2 and GeH,
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