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Carrier trapping and recombination in avalanche diodes

✍ Scribed by Eernisse, E.P.; Chaffin, R.J.

Book ID
114589914
Publisher
IEEE
Year
1970
Tongue
English
Weight
669 KB
Volume
17
Category
Article
ISSN
0018-9383

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πŸ“œ SIMILAR VOLUMES

Recombination and trapping of carriers i
Recombination and trapping of carriers in germanium
✍ H.Y. Fan; D. Navon; H. Gebbie πŸ“‚ Article πŸ“… 1954 πŸ› Elsevier Science βš– 1013 KB

The dependence of carrier lifetime on temperature has been investigated for n-type and p-type germanium. It is found that with decreasing temperature the lifetime decreases, but much faster in n-type than in p-type. The results are discussed in terms of recombination through trapping states. At suff