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Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

✍ Scribed by Xu, Z. Y.; Lu, Z. D.; Yang, X. P.; Yuan, Z. L.; Zheng, B. Z.; Xu, J. Z.; Ge, W. K.; Wang, Y.; Wang, J.; Chang, L. L.

Book ID: 121648423
Publisher: The American Physical Society
Year: 1996
Tongue: English
Weight: 60 KB
Volume: 54
Category: Article
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.54.11528

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📜 SIMILAR VOLUMES

Thermal activation and thermal transfer

Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

✍ Z.Y. Xu; Z.D. Lu; Z.L. Yuan; X.P. Yang; B.Z. Zheng; J.Z. Xu; W.K. Ge; Y. Wang; J 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 112 KB

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant dif