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Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

✍ Scribed by G. Sęk; F. Janiak; M. Motyka; K. Ryczko; J. Misiewicz; A. Bauer; S. Höfling; A. Forchel

No coin nor oath required. For personal study only.

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Type II quantum wells on GaSb substrate

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