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Carrier localization and impurity band conduction in GeSe

✍ Scribed by S. Ishida; T. Fukunaga; T. Kinosada; K. Murase

Publisher: Elsevier Science
Year: 1981
Weight: 223 KB
Volume: 105
Category: Article
ISSN: 0378-4363
DOI: 10.1016/0378-4363(81)90217-5

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## Abstract Measurements of the Hall coefficient, dc conductivity at low and moderate electric fields, and magnetoresistance are made on heavily doped and compensated GaSb single crystals from liquid helium to room temperature range. The electrical transport in the low temperature region up to abou