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Carrier Gas Dependence at Initial Processes for a -Plane AlN Growth on r -Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy
✍ Scribed by Tajima, Jumpei; Echizen, Chikashi; Togashi, Rie; Murakami, Hisashi; Kumagai, Yoshinao; Takada, Kazuya; Koukitu, Akinori
- Book ID
- 120005178
- Publisher
- Institute of Pure and Applied Physics
- Year
- 2011
- Tongue
- English
- Weight
- 598 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0021-4922
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