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Carrier Dynamics and Saturation Effect in (113)B InAs/InP Quantum Dot Lasers

✍ Scribed by K. Veselinov; F. Grillot; P. Miska; E. Homeyer; P. Caroff; C. Platz; J. Even; X. Marie; O. Dehaese; S. Loualiche; A. Ramdane

Publisher
Springer
Year
2006
Tongue
English
Weight
224 KB
Volume
38
Category
Article
ISSN
0306-8919

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## Abstract InAs/GaInAsP quantum dot (QD) structure grown by gas source molecular beam epitaxy on InP (100) substrate and designed as an active region for laser applications at 1.55 ΞΌm wavelength range has been investigated by optical spectroscopy in order to probe its energy electronic structure.