Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

✍ Scribed by J.H. Kim; Y.J. Park; Y.M. Park; J.D. Song; J.I. Lee; T.W. Kim

• Book ID: 108060063
• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 254 KB
• Volume: 253
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2006.07.051