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Carbon oxidation catalyzed by low melting point oxide phases

โœ Scribed by D.W. McKee


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
167 KB
Volume
25
Category
Article
ISSN
0008-6223

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Low-temperature oxidation of SiGe by liq
โœ Y.H. Chen; C.Y. Kung; J.D. Hwang; H.Y. Lin; H.J. Chan; P.S. Chen ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 382 KB

In recent years, silicon germanium (SiGe) has become one of the most promising materials for the fabrication of heterojunction bipolar transistor, metal-oxide-semiconductor (MOS) field-effect transistor (FET), and optoelectronic devices [1-3]. Among these devices, the MOS device is the most interest