Carbon nanotubes as potential building blocks for future nanoelectronics

✍ Scribed by J Appenzeller; R Martel; V Derycke; M Radosavljević; S Wind; D Neumayer; Ph Avouris

• Book ID: 104305757
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 363 KB
• Volume: 64
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)00813-4

✦ Synopsis

We present recent experiments on carbon nanotube field-effect transistors and their characteristics and compare the performance of these devices with state-of-the-art silicon MOSFETs. By reducing the gate dielectric film thickness and working with high-k dielectric materials such as HfO , we are able to effectively 2 reduce the operational voltages below 1 V. The electrical characteristics obtained clearly indicate excellent device performance in both the on-and off-state wit of the nanotube transistor. On / off-current ratios of almost 4 10 are achieved along with a maximum transconductance of around 425 mS/mm and drive currents of 270 mA/mm at V 2V 5 2 0.6 V. Since device parameters are not fully optimized, significant performance gs th improvements can be expected making carbon nanotubes particularly promising as building blocks for future nanoelectronics.