✦ LIBER ✦

Carbon incorporation in GaAs layer grown by atomic layer epitaxy

✍ Scribed by K. Mochizuki; M. Ozeki; K. Kodama; N. Ohtsuka

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Atomic layer epitaxy of GaAs by chemical

✍ T.H. Chiu; J.E. Cunningham; A. Robertson Jr.; D.L. Malm 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 494 KB

Shallow donors and deep levels in GaAs g

✍ A. Bosacchi; E. Gombia; R. Mosca; S. Franchi; A. Carnera; A. Gasparotto 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 431 KB

Thickness dependent properties of ZnSe o

✍ C.D. Lee; B.K. Kim; J.W. Kim; H.L. Park; C.H. Chung; S.K. Chang; J.I. Lee; S.K. 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 286 KB

A new GaAs on Si structure using AlAs bu

✍ Ohtsuka, N.; Kitahara, K.; Ozeki, M.; Kodama, K. 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 422 KB

Surface reaction mechanisms in GaAs atom

✍ Masao Mashita; Masahiro Sasaki; Yoshito Kawakyu; Hironori Ishikawa 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 882 KB

Niobium Oxide Thin Films Grown by Atomic

✍ Kaupo Kukli; Mikko Ritala; Markku Leskelä; Reijo Lappalainen 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 332 KB 👁 2 views