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Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide

✍ Scribed by E. Richter; P. Kurpas; D. Gutsche; M. Weyers

Book ID: 112824047
Publisher: Springer US
Year: 1995
Tongue: English
Weight: 367 KB
Volume: 24
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02676840

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