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Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer

✍ Scribed by Mikolášek, Miroslav; Stuchlíková, Ľubica; Harmatha, Ladislav; Vincze, Andrej; Nemec, Michal; Racko, Juraj; Breza, Juraj


Book ID
125457492
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
413 KB
Volume
312
Category
Article
ISSN
0169-4332

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