The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al 0.25 Ga 0.75 N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350 K. Using the quantitative mobility spectrum analysis (QMSA) method, it was sh
Capacitance analysis of Al0.25Ga0.75N/GaN heterostructure barrier varactor diodes
✍ Scribed by N. Tanuma; S. Yokokura; T. Matsui; M. Tacano
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 156 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract The electron transport properties in Al~0.25~Ga~0.75~N/AlN/GaN/In~__x__~Ga~1−__x__~N/GaN double heterostructures with various indium compositions and GaN channel thicknesses were investigated. Samples were grown on __c__‐plane sapphire substrates by MOCVD and evaluated using variable te
## Abstract The heterostructure barrier varactor design method aims at finding optimum epitaxial layer structure and device geometry to improve the diode power handling capability. The nonlinear thermal resistance of the HBV and an empirical expression introducing the leakage current are proposed a