Experimental evaluation of separate cont
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S.R.D. Kalingamudali; A.C. Wismayer; R.C. Woods
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Article
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1994
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Elsevier Science
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English
โ 328 KB
In this paper it is shown experimentally, for the first time, that the ideality factor n for the extrinsic base surface recombination current in A1GaAs/GaAs heterojunction bipolar transistors (HBTs)is unity and is bias independent. The devices with various emitter radii have been fabricated and the