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Calculation of surface recombination current in bipolar microelectronic structures subjected to ionizing radiation

โœ Scribed by V. S. Pershenkov; D. V. Savchenkov; A. S. Bakerenkov; A. S. Egorov


Book ID
110214377
Publisher
Springer
Year
2009
Tongue
English
Weight
238 KB
Volume
38
Category
Article
ISSN
1063-7397

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In this paper it is shown experimentally, for the first time, that the ideality factor n for the extrinsic base surface recombination current in A1GaAs/GaAs heterojunction bipolar transistors (HBTs)is unity and is bias independent. The devices with various emitter radii have been fabricated and the