Calculation of Neutron-Induced Defect Clusters in Silicon and Comparison with TEM Investigations
β Scribed by Gessner, T. ;Pasemann, M. ;Schmidt, B.
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 345 KB
- Volume
- 77
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
## Abstract A local electronicβstate density in Ξ²βcristobalite in the empirical tightβbinding approximation has been calculated by the recursion method. In particular, silicon clusters have been considered in Ξ²βcristobalite containing up to three coordination spheres of silicon atoms.
The structural relaxation and formation energies of intrinsic vacancies in cubic-BaTiO 3 were studied by using a first-principles planewave-based pseudopotential calculation. The calculated defect formation energies and the atomic relaxations were compared with previously reported data for SrTiO 3 [