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Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical Bond

✍ Scribed by Camphausen, Don L.; Connell, G. A. Neville; Paul, William


Book ID
118158899
Publisher
The American Physical Society
Year
1971
Tongue
English
Weight
589 KB
Volume
26
Category
Article
ISSN
0031-9007

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There is a significant and unexplained drop in the band-gap pressure coefficients of III-V ternary semiconductor alloys grown as strained layers compared with the bulk binary values. For example, the drop for In x Ga 1Γ€x As is about Γ°50xÞ meV/GPa. In the past, first order effects of pressure have be