✦ LIBER ✦

Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)

✍ Scribed by N. A. Poklonski; S. A. Vyrko; A. G. Zabrodskii

Book ID: 111444169
Publisher: Springer
Year: 2008
Tongue: English
Weight: 304 KB
Volume: 42
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782608120038

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Quasi-static capacitance of a weakly com

Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example ofp-Si:B)

✍ N. A. Poklonski; S. A. Vyrko; A. G. Zabrodskii 📂 Article 📅 2007 🏛 Springer 🌐 English ⚖ 253 KB

Field effect and capacitance of silicon

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level

✍ N. A. Poklonski; S. A. Vyrko; A. G. Zabrodskii 📂 Article 📅 2007 🏛 Springer 🌐 English ⚖ 266 KB

Calculation of self-impedance and radiat

Calculation of self-impedance and radiation efficiency of a dipole near a lossy cylinder with arbitrary cross section by using the moment method and a spectrum of two-dimensional solutions

✍ Jian Yang; Jan Carlsson; Per-Simon Kildal; Charlie Carlsson 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 275 KB 👁 1 views

## Abstract We present a computation method for the self‐impedance and radiation efficiency of a dipole near a lossy dielectric cylinder with arbitrary cross section by using a spectrum of two‐dimensional (2‐D) solutions. The 2‐D solutions for the spectral Green's functions of the cylinder as well