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Calculation of acoustic admittance at a burning surface

✍ Scribed by Yuri S. Ryazantsev; Vladimir E. Tulskih


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
716 KB
Volume
3
Category
Article
ISSN
0094-5765

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Direct and surface state mediated electr
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The interfacial electrical admittance of a semiconductor electrode exchanging majority carriers with a simple redox system is calculated from basic assumptions presented in a previous paper. Direct exchange and surface state mediated exchange are considered. The coupling between the occupancy of the