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Cadmium suphide films prepared by pulsed electrodeposition

✍ Scribed by G.C. Morris; R. Vanderveen

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
699 KB
Volume
27
Category
Article
ISSN
0927-0248

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## Abstract GaAs is a III–V compound possessing high mobility and a direct band gap of 1.43 eV, making it a very suitable candidate for photovoltaic applications. Thin GaAs films were prepared by plating an aqueous solution containing GaCl~3~ and As~2~O~3~ at a pH of 2 and at room temperature. The