C-V and G-V characterization of in-situ fabricated Ga2O3GaAs interfaces for inversion/accumulation device and surface passivation applications

✍ Scribed by M. Passlack; M. Hong; J.P. Mannaerts

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 320 KB
• Volume: 39
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(96)00006-8