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C-Sb Materials as Candidate for Phase-Change Memory

✍ Scribed by Chih-Chung Chang; Po-Chin Chang; Kin-Fu Kao; Tri-Rung Yew; Ming-Jinn Tsai; Tsung-Shune Chin

Book ID
114654519
Publisher
IEEE
Year
2011
Tongue
English
Weight
595 KB
Volume
47
Category
Article
ISSN
0018-9464

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Phase-change random-access memory (PCRAM) is an emerging ultrahigh capacity nonvolatile memory technology. It relies on an electric-pulse-induced phase transition to SET (crystallize) or RESET (amorphize) the phase-change material in the memory cell. There are at least two orders of magnitude differ