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Bulk defect induced low-frequency noise in n+-p silicon diodes

✍ Scribed by Fan-Chi Hou; Bosman, G.; Simoen, E.; Vanhellemont, J.; Claeys, C.


Book ID
114537505
Publisher
IEEE
Year
1998
Tongue
English
Weight
362 KB
Volume
45
Category
Article
ISSN
0018-9383

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## Abstract The electrical and low frequency noise properties of 4H‐SiC p^+^–n–n^+^ junctions have been investigated at different temperatures. The forward current–voltage characteristics are described as the sum of a recombination current originating from carrier recombination on the sidewall of t