Broadband Near-Infrared Luminescence from γ-ray Irradiated Bismuth-Doped Y4GeO8 Crystals

✍ Scribed by Xu, Beibei; Tan, Dezhi; Guan, Miaojia; Teng, Yu; Zhou, Jiajia; Qiu, Jianrong; Hong, Zhanglian

• Book ID: 125465843
• Publisher: The Electrochemical Society
• Year: 2011
• Tongue: English
• Weight: 921 KB
• Volume: 158
• Category: Article
• ISSN: 0013-4651
• DOI: 10.1149/1.3607428

✦ Synopsis

Broadband near-infrared emission centered at 1155 nm with full width at half maximum over 300 nm has been observed in c-ray irradiated bismuth-doped Y 4 GeO 8 crystals. The luminescence was bleached completely after thermal treatment at 350 C for 2 h. Absorption spectra, electron spin resonance spectra, Raman spectra, excitation and emission spectra indicate that valence state change of bismuth was induced by c-ray irradiation, and 3 P 1 ! 3 P 0 transition of Bi þ ions is responsible for the near-infrared emission. The effect of Bi concentration on the luminescence properties of c-ray irradiated samples was also discussed.