## Abstract The operation of a previously proposed terahertz (THz) detector is formulated in detail. The detector is based on the hot‐electron effect of the 2D electron gas (2DEG) in the quantum well (QW) of a GaAs/AlGaAs heterostructure. The interaction between the THz radiation and the 2DEG, the
Broad-band microwave detection with a novel 2D hot-electron device
✍ Scribed by S. Barbieri; F. Mango; F. Beltram; M. Lazzarino; L. Sorba
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 105 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We present the operation of a new AlGaAs-GaAs multiquantum well hot-electron microwave detector. The working principle of this device is based on the interaction of twodimensional free carriers inside the wells with the in-plane electric field.
We shall report room-temperature responsivity of several 10 3 V W -1 , comparable to that of conventional solid-state devices. The different physical principle of operation, however, yields for the present detector a broader frequency range, extending up to the submillimetre band, and short response times which can be estimated around 10 ps. Finally, we report a characterization of the device from the point of view of noise.
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