Breakdown of shallow-level donors in Si and Ge on the insulating side of a strain-induced metal-insulator transition

✍ Scribed by S. I. Budzulyak; E. F. Venger; Yu. P. Dotsenko; V. N. Ermakov; V. V. Kolomoets; V. F. Machulin; L. I. Panasyuk

• Book ID: 110124696
• Publisher: Springer
• Year: 2000
• Tongue: English
• Weight: 44 KB
• Volume: 34
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1309413