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Breakdown of overlapping-gate GaAs MESFETs

✍ Scribed by Chang-Lee Chen

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical current instability at gate b

✍ Vashhenko, V.A.; Martynov, J.B.; Sinkevitch, V.F.; Tager, S. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 590 KB

Gate-drain avalanche breakdown in GaAs p

✍ David, J.P.R.; Sitch, J.E.; Stern, M.S. 📂 Article 📅 1982 🏛 IEEE 🌐 English ⚖ 580 KB

GaAs dual-gate MESFET's

✍ Furutsuka, T.; Ogawa, M.; Kawamura, N. 📂 Article 📅 1978 🏛 IEEE 🌐 English ⚖ 650 KB

Surface potential effect on gate—Drain a

✍ Mizuta, H.; Yamaguchi, K.; Takahashi, S. 📂 Article 📅 1987 🏛 IEEE 🌐 English ⚖ 650 KB

Reverse breakdown in GaAs MESFET's

✍ Zaitlin, M.P. 📂 Article 📅 1986 🏛 IEEE 🌐 English ⚖ 548 KB

Modelling DC characteristics of dual-gat

✍ Minasian, R.A. 📂 Article 📅 1983 🏛 The Institution of Electrical Engineers ⚖ 631 KB