Breakdown characteristics of emitter-base and collector-base junctions of silicon bipolar junction transistors : Sheng-Lyang Jang and Kuang-Lang Chern. Solid-St. Electron. 35, 615 (1992)

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 139 KB
• Volume: 32
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(92)90284-r