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Bragg surface wave device based on porous silicon and its application for sensing

โœ Scribed by Guillermain, E.; Lysenko, V.; Orobtchouk, R.; Benyattou, T.; Roux, S.; Pillonnet, A.; Perriat, P.

Book ID
120208676
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
503 KB
Volume
90
Category
Article
ISSN
0003-6951

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Porous silicon was prepared by anodization of a p/p+ epitaxial c-Si wafer. Its structure was examined by electron microscopy, Raman spectroscopy, and infrared spectroscopy. The results of the examination show that the porous Si consists of many nano-scale pores and crystalline slices, and that there