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Bottom contact ambipolar organic thin film transistor and organic inverter based on C60/pentacene heterostructure

โœ Scribed by S.D. Wang; K. Kanai; Y. Ouchi; K. Seki


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
255 KB
Volume
7
Category
Article
ISSN
1566-1199

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โœฆ Synopsis


We report on the fabrication and characterization of the bottom contact organic thin film transistor and inverter based on a heterostructure of C 60 on pentacene. The transistor shows ambipolar transport characteristics with high electron and hole mobilities of 0.23 cm 2 V ร€1 s ร€1 and 0.14 cm 2 V ร€1 s ร€1 , respectively. Both the n-channel in C 60 and the p-channel in pentacene are stable in N 2 atmosphere. After exposure to air, the n-channel is completely degraded whereas the p-channel keeps working. The inverter exhibits typical transfer characteristics, which are interpreted by the distribution of the accumulated electrons and holes depending on the bias conditions. The combination of the high performance and the bottom configuration of our devices suggests a potential way to fabricate organic complementary circuits without patterning of organic materials.


๐Ÿ“œ SIMILAR VOLUMES


Ambipolar thin-film transistors and an i
โœ Chanwoo Yang; Youngjin Kwack; Se Hyun Kim; Tae Kyu An; Kipyo Hong; Sooji Nam; Mi ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 968 KB

We have fabricated high performance ambipolar thin-film transistors (TFTs) and an inverter based on organic-inorganic bilayer structures composed of an upper pentacene layer and a lower atomic-layer-deposited zinc oxide (ZnO) layer. The insertion of a dodecanoic acid (DA) self-assembled monolayer (S