✦ LIBER ✦

Bonding state in GaAs/Si interface

✍ Scribed by Hong Wu; Zhanping Li; Wei Ho

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 134 KB
Volume: 43
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(92)90358-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Bonding state in GaAs/Si interface : Hon

Bonding state in GaAs/Si interface : Hong Wu, Zhanping Li and Wei Ho. Vacuum43(11), 1159 (1992)

📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 105 KB

Bonding and gap states at GaAs-oxide int

Bonding and gap states at GaAs-oxide interfaces

✍ John Robertson; Liang Lin 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 659 KB

Structure and chemical bonding at the in

Structure and chemical bonding at the interfaces GaAs/Si and GaAs/Ge

✍ Pham V. Huong; A. Leycuras 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 261 KB

Photoreflectance of GaAs/SI-GaAs interfa

Photoreflectance of GaAs/SI-GaAs interface

✍ Wang, Zhonghe ;Pan, Shihong ;Mu, Shanming 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 433 KB

Interface states in SiSiO2 interfaces

✍ H. Deuling; E. Klausmann; A. Goetzberger 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 771 KB

Experimental and theoretical studies of

Experimental and theoretical studies of Si–CN bonds to eliminate interface states at Si/SiO2 interface

✍ Osamu Maida; Akira Asano; Masao Takahashi; Hitoo Iwasa; Hikaru Kobayashi 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 241 KB

Cyanide treatment, which includes the immersion of Si in KCN solutions followed by a rinse, effectively passivates interface states at Si/SiO 2 interfaces by the reaction of CN À ions with interface states to form Si-CN bonds. X-ray photoelectron spectroscopy (XPS) measurements show that the concent