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Bonding and surface electronic structure of an Sb overlayer on GaP(110)

✍ Scribed by F. Manghi; C. Calandra; E. Molinari


Publisher
Elsevier Science
Year
1987
Weight
43 KB
Volume
184
Category
Article
ISSN
0167-2584

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Electronic structures of 1 = 1-AurSi 111 systems have been calculated by the ab initio pseudopotential method in a local density approximation. Au and top-layer Si produce the bonding and a large charge transfer is seen from Si to Au. Comparing the results with and without on-top Si layer, it is sho