Bond model for semiconducting materials

✍ Scribed by L. Garbato; P. Manca; G. Mula

• Book ID: 104580319
• Publisher: John Wiley and Sons
• Year: 1981
• Tongue: English
• Weight: 207 KB
• Volume: 19
• Category: Article
• ISSN: 0020-7608
• DOI: 10.1002/qua.560190630

✦ Synopsis

Abstract

A bond model directly derived from an LCAO Hamiltonian is applied to the study of Group IV elemental semiconductors. The derivation has been made through suitable approximations of the interaction integrals. The average and the lowest energy gaps of C, Si, Ge, and α‐Sn are then computed with the use of just one parameter. The overall reliability of the model has been checked by computing the lattice dilatation contribution to the temperature coefficient of the lowest energy gap of Ge. The result is in excellent agreement with the experiment.