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Boltzmann transport equation-based thermal modeling approaches for hotspots in microelectronics

โœ Scribed by Sreekant V. J. Narumanchi; Jayathi Y. Murthy; Cristina H. Amon

Book ID
105924818
Publisher
Springer-Verlag
Year
2005
Tongue
English
Weight
495 KB
Volume
42
Category
Article
ISSN
1432-1181

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We propose a novel quantum transport model applicable to multi-dimensional practical submicron devices. The quantum effects are successfully represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation.