Multiple Quantum Well InGaN/GaN Blue Opt
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Yablonskii, G.P. ;Lutsenko, E.V. ;Pavlovskii, V.N. ;Marko, I.P. ;Gurskii, A.L. ;
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Article
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2001
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John Wiley and Sons
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English
⚖ 94 KB
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Lasing under optical pumping by N 2 -laser radiation in InGaN/GaN multiple quantum well heterostructures grown in AIXTRON MOVPE reactors was achieved and investigated in the wavelength range of 450-470 nm. The laser operation wavelength depends most strongly on V/III ratio during quantum well barrie