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Blistering kinetics of GaN by hydrogen implantation at high temperature

โœ Scribed by H.J. Woo; H.W. Choi; W. Hong; J.H. Park; C.H. Eum


Book ID
108278520
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
931 KB
Volume
203
Category
Article
ISSN
0257-8972

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Kinetics of hydrogen absorption by scand
โœ Giovanni Mazzolai ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 550 KB

Hydrogen absorption by Sc has been investigated over wide ranges of temperature (790e1280 K) and pressure (10e150 mbar). The absorbed quantities of H were in agreement with those expected from p-x-T isotherms, available in the literature, only for temperatures higher than 1000 K, where the absorptio