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Binding energies and density of impurity states in spherical GaAs-(Ga,Al)As quantum dots

✍ Scribed by Porras-Montenegro, N.; Pérez-Merchancano, S. T.; Latgé, A.

Book ID
120052263
Publisher
American Institute of Physics
Year
1993
Tongue
English
Weight
530 KB
Volume
74
Category
Article
ISSN
0021-8979

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The binding energy of a donor impurity in a spherical GaAs±(Ga,Al)As quantum dot with parabolic confinement is calculated as a function of the radius of the quantum dot and as a function of the intensity of an applied electric field. Calculations are performed within the effective-mass approximation