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Binary contribution to nucleation rates

✍ Scribed by C.F. Clement; I.J. Ford

Book ID: 117130905
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 98 KB
Volume: 28
Category: Article
ISSN: 0021-8502
DOI: 10.1016/s0021-8502(97)86842-5

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## Abstract Based on Fourier transform infrared (FTIR) spectroscopy and bulk micro‐defect investigations, in relation to earlier results of other groups, we suggest the following model for oxide precipitate nucleation in N‐doped silicon. Around 600 °C a nucleation maximum exists where oxide precipi