𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Bimodal statistic on a single dot device

✍ Scribed by C. Fricke; F. Hohls; W. Wegscheider; R.J. Haug

Book ID
104085246
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
246 KB
Volume
40
Category
Article
ISSN
1386-9477

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✦ Synopsis

We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as noninvasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For bias voltages at which excited states become accessible we find a bimodal characteristic of the counting distribution. The bimodal distribution arises from a slow switching between different electron configurations on the dot. To characterize the switching process we analyze the time dependence of the number of electrons passing the dot in a given time.

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