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Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

โœ Scribed by Castro, Eduardo V.; Novoselov, K. S.; Morozov, S. V.; Peres, N. M. R.; dos Santos, J. M. B. Lopes; Nilsson, Johan; Guinea, F.; Geim, A. K.; Neto, A. H. Castro


Book ID
120635836
Publisher
The American Physical Society
Year
2007
Tongue
English
Weight
325 KB
Volume
99
Category
Article
ISSN
0031-9007

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