Bias Temperature Instability for Devices and Circuits

✍ Scribed by Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)

• Publisher: Springer-Verlag New York
• Year: 2014
• Tongue: English
• Leaves: 805
• Edition: 1
• Category: Library

✦ Synopsis

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

✦ Table of Contents

Front Matter....Pages i-xi
Front Matter....Pages 1-1
Bias Temperature Instability Characterization Methods....Pages 3-31
Application of On-Chip Device Heating for BTI Investigations....Pages 33-51
Statistical Characterization of BTI-Induced High-k Dielectric Traps in Nanoscale Transistors....Pages 53-74
The Time-Dependent Defect Spectroscopy....Pages 75-109
Analysis of Oxide Traps in Nanoscale MOSFETs using Random Telegraph Noise....Pages 111-134
BTI-Induced Statistical Variations....Pages 135-160
Statistical Distribution of Defect Parameters....Pages 161-176
Atomic-Scale Defects Associated with the Negative Bias Temperature Instability....Pages 177-228
Charge Properties of Paramagnetic Defects in Semiconductor/Oxide Structures....Pages 229-252
Oxide Defects....Pages 253-285
Understanding Negative-Bias Temperature Instability from Dynamic Stress Experiments....Pages 287-302
Front Matter....Pages 303-303
Atomistic Modeling of Defects Implicated in the Bias Temperature Instability....Pages 305-321
Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulation....Pages 323-348
A Comprehensive Modeling Framework for DC and AC NBTI....Pages 349-378
On the Microscopic Limit of the RD Model....Pages 379-408
Advanced Modeling of Oxide Defects....Pages 409-446
The Capture/Emission Time Map Approach to the Bias Temperature Instability....Pages 447-481
Front Matter....Pages 483-483
Impact of Hydrogen on the Bias Temperature Instability....Pages 485-505
FEOL and BEOL Process Dependence of NBTI....Pages 507-532
Negative Bias Temperature Instability in Thick Gate Oxides for Power MOS Transistors....Pages 533-559
Front Matter....Pages 483-483
NBTI and PBTI in HKMG....Pages 561-584
PBTI in High-k Oxides....Pages 585-596
Characterization of Individual Traps in High-κ Oxides....Pages 597-614
NBTI in (Si)Ge Channel Devices....Pages 615-641
Characteristics of NBTI in Multi-gate FETs for Highly Scaled CMOS Technology....Pages 643-659
Bias-Temperature Instabilities in Silicon Carbide MOS Devices....Pages 661-675
Front Matter....Pages 677-677
On-Chip Silicon Odometers for Circuit Aging Characterization....Pages 679-717
Multilevel Reliability Simulation for IC Design....Pages 719-749
Charge Trapping in MOSFETS: BTI and RTN Modeling for Circuits....Pages 751-782
Simulation of BTI-Related Time-Dependent Variability in CMOS Circuits....Pages 783-810

✦ Subjects

Circuits and Systems;Semiconductors;Electronics and Microelectronics, Instrumentation;Quality Control, Reliability, Safety and Risk