Bias temperature instability assessment of n- and p-channel MOS transistors using a polysilicon resistive heated scribe lane test structure

✍ Scribed by Werner Muth; Wolfgang Walter

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 499 KB
• Volume: 44
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2004.04.011