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Bi-directional field effect light emitting and absorbing heterojunction with Ga0.8In0.2N0.015As0.985 at 1250 nm

✍ Scribed by Wah, J.Y.; Loubet, N.; Potter, R.J.; Mazzucato, S.; Arnoult, A.; Carrere, H.; Bedel, E.; Marie, X.; Balkan, N.


Book ID
114455968
Publisher
The Institution of Electrical Engineers
Year
2003
Tongue
English
Weight
172 KB
Volume
150
Category
Article
ISSN
1350-2433

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