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Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors

✍ Scribed by Spijkman, M.; Smits, E. C. P.; Cillessen, J. F. M.; Biscarini, F.; Blom, P. W. M.; de Leeuw, D. M.


Book ID
120036530
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
775 KB
Volume
98
Category
Article
ISSN
0003-6951

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