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Bend-resistance nanomagnetometry: spatially resolved magnetization studies in a ferromagnet/semiconductor hybrid structure

✍ Scribed by D Grundler; T.M Hengstmann; N Klockmann; Ch Heyn; D Heitmann


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
249 KB
Volume
12
Category
Article
ISSN
1386-9477

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✦ Synopsis


We have investigated the four-terminal magnetoresistance in a cross junction of a high-mobility two-dimensional electron system underneath a ferromagnetic microstructure. We ÿnd that, in contrast to the Hall resistance which gives an averaged response, the bend resistance allows one to obtain information on the local magnetic ÿeld pattern. Using this e ect, we have studied the switching behavior of a two-micromagnet system.