✦ LIBER ✦
Behavior of point radiation defects during rapid photon annealing of GaAs layers implanted with various doses of Si and Se ions
✍ Scribed by V.T. Bublik; S.B. Evgen'ev; A.A. Kalinin; M.G. Milvidski; A.W. Nemirovski
- Book ID
- 114169100
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 421 KB
- Volume
- 127-128
- Category
- Article
- ISSN
- 0168-583X
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