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Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance

✍ Scribed by Umeda, T.; Esaki, K.; Kosugi, R.; Fukuda, K.; Ohshima, T.; Morishita, N.; Isoya, J.

Book ID: 118173408
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 881 KB
Volume: 99
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3644156

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