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Basic properties of anodized porous silicon formed under uniform current density

โœ Scribed by Hidekazu Aoyagi; Akira Motohashi; Akira Kinoshita; Tomoyoshi Aono; Akinobu Satoh

Book ID
112078889
Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
735 KB
Volume
77
Category
Article
ISSN
8756-663X

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๐Ÿ“œ SIMILAR VOLUMES

Spontaneous layering of porous silicon l
Spontaneous layering of porous silicon layers formed at high current densities
โœ Parkhutik, Vitali ;Curiel-Esparza, Jorge ;Millan, Mari-Carmen ;Albella, Jose ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 244 KB

## Abstract We report here a curious effect of spontaneous fracturing of the silicon layers formed in galvanostatic conditions at medium and high current densities. Instead of formation of homogeneous pโ€Si layer as at low currents, a stack of thin layers is formed. Each layer is nearly separated fr