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Barrier height study on AuInP Schottky diodes

✍ Scribed by Hess, J. M. ;Nguyen, P. H. ;Lepley, B. ;Ravelet, S.


Book ID
118285979
Publisher
John Wiley and Sons
Year
1978
Tongue
English
Weight
198 KB
Volume
46
Category
Article
ISSN
0031-8965

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On barrier height inhomogeneities of Au
✍ H. Çetin; E. Ayyildiz 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 258 KB

In this work, barrier height inhomogeneity and its origin are investigated for Au and Cu/n-InP metal/ semiconductor contacts. The effective barrier height values of the Au and Cu/n-InP Schottky barrier diodes (SBDs) have been obtained as 0.480 and 0.404 eV from current-voltage (I-V) characteristics